Towards forming-free resistive switching in oxygen engineered HfO2-x
Towards forming-free resistive switching in oxygen engineered HfO2-x
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DOI：
10.1063/1.4864653
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发表时间：
2014-02-10
影响因子：
4
通讯作者：
Alff, L.
中科院分区：
文献类型：
--
作者：
Sharath, S. U.;Bertaud, T.;Alff, L.
我们研究了用反应分子束外延技术在TiN电极上生长的化学计量比HfO 2和缺氧HfO 2-x薄膜的阻变行为。薄膜生长过程中氧自由基的流动控制氧缺陷态。硬X射线光电子能谱证实了亚化学计量的氧化铪和费米能级附近的缺陷态的存在。缺氧的HfO 2-x薄膜显示双极开关与电铸发生在低电压和低工作电流，铺平了道路，几乎形成无设备的低功率应用。(C)2014 AIP Publishing LLC.
We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2-x thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO2-x thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications. (C) 2014 AIP Publishing LLC.