High-performance photodetectors based on Sb2S3 nanowires: wavelength dependence and wide temperature range utilization
High-performance photodetectors based on Sb2S3 nanowires: wavelength dependence and wide temperature range utilization
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基于 Sb2S3 纳米线的高性能光电探测器：波长依赖性和宽温度范围利用
DOI：
10.1039/c7nr03574h
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发表时间：
2017
期刊：
影响因子：
6.7
通讯作者：
Wei Zhongming
中科院分区：
文献类型：
--
作者：
Zhong Mianzeng;Wang Xinghua;Liu Sijie;Li Bo;Huang Le;Cui Yu;Li Jingbo;Wei Zhongming
能够在低温和高温下工作的光电探测器对于实用光电器件的发展具有重要意义。许多研究表明，低维半导体在光电子应用中比体材料具有更多的优势。在这里，我们报告了通过硫辅助蒸气传输方法制备高质量Sb 2S 3纳米线（NW）的方法。相应的单个Sb 2S 3 NW基光电探测器在约300至800 nm的宽光谱范围内表现出良好的光响应。在室温下，在638 nm激光的照射下测量最佳的光响应值：高电流ON/OFF比约为210，光谱响应率为1152 A W−1，探测率为2 × 1013 Jones，上升和下降时间分别约为37 ms。更重要的是，Sb 2S 3的电导率的温度依赖性显示出三个变化区域，这可以归因于载流子迁移率和载流子浓度之间的相互作用。光响应的温度依赖性表明，它们具有良好的温度适应性，在8 ~ 420 K的较宽温度范围内工作良好。我们的研究结果表明，低维Sb_2S_3晶体是新型多功能光电器件的有希望的候选者。
Photodetectors which can work at both low and high temperatures are very important for the development of practical optoelectronic devices. Many studies have shown that low-dimensional semiconductors have more advantages in optoelectronic applications than their bulk forms. Here, we report the preparation of high-quality Sb2S3 nanowires (NWs) by a sulphur-assisted vapour transport method. The corresponding individual Sb2S3 NW based photodetectors exhibit good photoresponse in a wide spectral range from about 300 to 800 nm. The optimal photoresponse values are measured under the illumination of a 638 nm laser at room temperature: a high current ON/OFF ratio of about 210, a spectral responsivity of 1152 A W−1, a detectivity of 2 × 1013 Jones, and rise and fall times of about 37 ms, respectively. More importantly, the temperature dependence of the electrical conductivity of Sb2S3 shows three variation regions which can be attributed to the interaction between the carrier mobility and carrier concentration. The temperature dependence of the photoresponse of the photodetectors shows that they have good adaptability to temperature, and they worked very well at a wide temperature range from 8 to 420 K. Our results indicate that low-dimensional Sb2S3 crystals are promising candidates for new multifunctional optoelectronic devices.