Formation and decay of electron-hole droplets in diamond
Formation and decay of electron-hole droplets in diamond
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DOI：
10.1103/physrevb.71.035215
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发表时间：
2004-08
影响因子：
3.7
通讯作者：
J. Jiang;M. W. Wu;M. Nagai;M. Kuwata-Gonokami
中科院分区：
文献类型：
--
作者：
J. Jiang;M. W. Wu;M. Nagai;M. Kuwata-Gonokami
我们通过主方程研究不同激发下低温和高温下金刚石中电子空穴液滴的形成和衰变。计算表明，在低温下，系统的动力学行为与直接带隙半导体相同，而在高温下，系统的动力学表现与传统间接带隙半导体相同。我们在低温下的结果与 Nagai {\em et al.} [Phys.修订版 B {\bf 68}, 081202 (R) (2003)]。还预测了在低激发和高激发下高温下金刚石的 e-h 系统动力学。
We study the formation and decay of electron-hole droplets in diamonds at both low and high temperatures under different excitations by master equations. The calculation reveals that at low temperature the kinetics of the system behaves as in direct-gap semiconductors, whereas at high temperature it shows metastability as in traditional indirect-gap semiconductors. Our results at low temperature are consistent with the experimental findings by Nagai {\em et al.} [Phys. Rev. B {\bf 68}, 081202 (R) (2003)]. The kinetics of the e-h system in diamonds at high temperature under both low and high excitations is also predicted.