Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors
Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors
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DOI：
10.1111/j.1551-2916.2007.01955.x
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发表时间：
2007-11
影响因子：
3.9
通讯作者：
S. Wee;A. Goyal;H. Hsu;Jing Li;L. Heatherly;Kyunghoon Kim;T. Aytug;S. Sathyamurthy;M. Paranthaman
中科院分区：
文献类型：
--
作者：
S. Wee;A. Goyal;H. Hsu;Jing Li;L. Heatherly;Kyunghoon Kim;T. Aytug;S. Sathyamurthy;M. Paranthaman
研究了在双轴织构Ni-3at.%上外延生长的La{sub 2}Zr{sub 2}O{sub 7}（LZO）薄膜的晶化过程W衬底具有薄的Y{sub 2}O{sub 3}（10 nm）籽晶层。LZO薄膜沉积在受控的潮湿气氛下使用卷到卷狭缝模具涂布的化学溶液前体。在各种工艺条件下的控制结晶揭示了一个广泛的相空间，获得高品质的，外延LZO薄膜没有微裂纹，没有退化的晶体织构和高表面结晶度。即使在850-950 ℃的相对较低的退火温度下，在Ar-4%H2的流动的一个大气压的气体混合物中，有效氧分压为P（O2）{approx}10{sup-22} atm，也获得了无裂纹和强c轴取向的LZO膜。织构和反射高能电子衍射分析表明，低温退火样品具有较强的立方对立方外延和较高的表面结晶度，与1100 ℃高温退火的LZO薄膜相当。此外，这些样品具有比在较高温度下退火的膜更光滑的表面形态。Ni扩散到LZO缓冲膜中的速率也预期在较低退火温度下显著降低。
Crystallization studies were performed of epitaxial La{sub 2}Zr{sub 2}O{sub 7} (LZO) films on biaxially textured Ni-3at.%W substrates having thin Y{sub 2}O{sub 3} (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c-axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850-950 C in flowing one atmosphere gas mixtures of Ar-4% H2 with an effective oxygen partial pressure of P(O2){approx}10{sup -22} atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100 C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.