An Ultra-steep Slope Two-dimensional Strain Effect Transistor
An Ultra-steep Slope Two-dimensional Strain Effect Transistor
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DOI：
10.1021/acs.nanolett.2c02194
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发表时间：
2022-11-23
期刊：
影响因子：
10.8
通讯作者：
Das, Saptarshi
中科院分区：
文献类型：
--
作者：
Das, Sarbashis;Das, Saptarshi
我们介绍了一种高性能的超陡坡开关，称为应变效应晶体管（SET），该开关在室温下的亚阈值摆幅< 0.68 mV/ 10，源漏电流变化为7个数量级，该开关基于原子薄的1T '-MoTe2作为通道材料，压电锆钛酸铅（PZT）作为栅极介质，镍（Ni）作为源漏接触金属。我们利用PZT中栅极电压引起的应变转导导致金属触点的突然和可逆断裂来实现突然开关。该SET还具有低关断电流< 1 pA/ μ m，高通断电流> 1.8 mA/ μ m，电源电压为1 V时，大电流开/关比>x 109，高跨导> 100 μ S/ μ m。该SET的开关延迟小于5 μ S，即使在100万（1 x 106）个开关循环后也未观察到器件故障。
We introduce a high-performance and ultra-steep slope switch, referred to as strain effect transistor (SET), with a subthreshold swing < 0.68 mV/decade at room temperature for 7 orders of magnitude change in the source-to-drain current based on atomically thin 1T '-MoTe2 as the channel material, piezoelectric lead zirconate titanate (PZT) as the gate dielectric, and nickel (Ni) as the source/drain contact metal. We exploit gate voltage induced strain transduction in PZT leading to abrupt and reversible cracking of the metal contacts to achieve the abrupt switching. The SET also exhibits a low OFF-state current < 1 pA/ mu m, a high ON-state current > 1.8 mA/mu m at a supply voltage of 1 V, a large current ON/OFF ratio > 1 x 109, and a high transconductance of > 100 mu S/mu m. The switching delay for the SET was found to be < 5 mu s, and no device failure was observed even after 1 million (1 x 106) switching cycles.