Ultrasensitive Detection of Phosphate Using Ion-Imprinted Polymer Functionalized AlInN/GaN High Electron Mobility Transistors
Ultrasensitive Detection of Phosphate Using Ion-Imprinted Polymer Functionalized AlInN/GaN High Electron Mobility Transistors
复制标题
使用离子压印聚合物功能化 AlInN/GaN 高电子迁移率晶体管对磷酸盐进行超灵敏检测
DOI：
10.1109/led.2016.2567447
复制
发表时间：
2016-07-01
影响因子：
4.9
通讯作者：
Zheng, Y. D.
中科院分区：
文献类型：
--
作者：
Jia, X. L.;Huang, X. Y.;Zheng, Y. D.
在这封信中，第一次研究磷酸盐检测基于AlInN/GaN高电子迁移率晶体管（HEMT）。利用磷酸根离子印迹聚合物对GaN HEMT基传感器的非栅区进行功能化，并通过检测不同浓度的磷酸根溶液分析其传感行为。结果表明，AlInN/GaN传感器对磷酸根阴离子具有超灵敏的响应和特异性识别，其检测限低于0.02 mg/L，远低于浮游生物生长的极限指示水平0.1 mg/L，而AlInN/GaN传感器对磷酸根阴离子的灵敏度高于AlGaN/GaN传感器.这种超高的灵敏度是由于在AlInN/GaN异质结构中使用了更薄的阻挡层，这使得二维电子气通道对表面电荷的变化更敏感。
In this letter, a first study on phosphate detection based on AlInN/GaN high electron mobility transistors (HEMTs) is presented. The ungated regions of GaN HEMT-based sensors were functionalized with the phosphate ion-imprinted polymer and their sensing behaviors were analyzed by detecting different concentrations of phosphate solutions. The results show that the AlInN/GaN sensor exhibits an ultrasensitive response and a specific recognition to phosphate anion and reaches a detection limit below 0.02 mg/L level, which is much lower than the limited indicator level of 0.1 mg/L for the plankton growth, while the AlInN/GaN sensor shows a higher sensitivity to phosphate anion when compared with the AlGaN/GaN sensor. This ultra-high sensitivity is attributed to the use of thinner barrier layer in the AlInN/GaN heterostructure, which makes 2-D electron gas channel more sensitive to the change of surface charge.