In situ control of electron gas dimensionality in freely suspended semiconductor membranes
In situ control of electron gas dimensionality in freely suspended semiconductor membranes
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自由悬浮半导体膜中电子气维数的原位控制
DOI：
10.1063/1.1580641
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
R. Blick
中科院分区：
文献类型：
--
作者：
Eva M. Höhberger;Tomas Krämer;W. Wegscheider;R. Blick
我们提出了门控悬浮低维电子系统的制造和测量。该器件的核心部件是嵌入在GaAs/AlGaAs异质结构处理的独立梁中的低维电子气。电子系统的维度完全由悬浮膜上的多个门控电极控制。操作中的量子霍尔制度，在一维的情况下，并作为零维量子点被证明。由此产生的设备可以被应用为超灵敏的辐射热计和纳米机电电路，达到位移检测的极限。
We present fabrication and measurements of gated suspended low-dimensional electron systems. The core component of the device is a low-dimensional electron gas embedded in a free-standing beam processed from a GaAs/AlGaAs heterostructure. The dimensionality of the electronic system is fully controlled by a number of gating electrodes on the suspended membranes. Operation in the quantum Hall regime, in the one-dimensional case, and as zero-dimensional quantum dots is demonstrated. The resulting devices can be applied as ultrasensitive bolometers and as nanoelectromechanical circuits that reach the ultimate limits of displacement detection.