Synthesis and characterization of crystalline films on silicon
Synthesis and characterization of crystalline films on silicon
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硅上晶体薄膜的合成与表征
DOI：
10.1088/0953-8984/8/45/005
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
E. G. Wang
中科院分区：
文献类型：
--
作者：
Yan Chen;Liping Guo;Feng Chen;E. G. Wang
我们报道了用偏压辅助的热灯丝化学气相沉积法在Si（100）衬底上成功地合成了几乎纯的晶态和薄膜。扫描电子显微镜观察表明，衬底表面被多晶团簇所覆盖，其大小和密度为。通过能量色散X射线分析得到相对N/C组成在1.34 - 2.5范围内。通过X射线衍射和透射电子显微镜测定了晶格参数a = 7.06 nm和c = 2.72 nm，和a = 6.48 nm和c = 4.71 nm。找到的缓冲层。
We report the successful experimental synthesis of nearly pure crystalline - and films on a Si(100) substrate by bias-assisted hot-filament chemical vapour deposition. Scanning electron microscopy shows that the substrate surface is covered by polycrystalline clusters in size with a density of . Relative N/C compositions in the range 1.34 - 2.5 were obtained by energy-dispersive x-ray analysis. The lattice parameters a = 7.06 Å and c = 2.72 Å for , and a = 6.48 Å and c = 4.71 Å for were determined both by x-ray diffraction and by transmission electron microscopy. A buffer layer of was found.