Giant Stark effect in the emission of single semiconductor quantum dots
Giant Stark effect in the emission of single semiconductor quantum dots
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DOI：
10.1063/1.3460912
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发表时间：
2010-07-19
影响因子：
4
通讯作者：
Shields, Andrew J.
中科院分区：
文献类型：
--
作者：
Bennett, Anthony J.;Patel, Raj B.;Shields, Andrew J.
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of 500 kV cm(-1), leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460912]
