EVOLUTION OF THE STRAIN RELAXATION IN A GE LAYER ON SI(001) BY RECONSTRUCTION AND INTERMIXING
EVOLUTION OF THE STRAIN RELAXATION IN A GE LAYER ON SI(001) BY RECONSTRUCTION AND INTERMIXING
复制标题
SI(001)上GE层应变弛豫的重构和混合演化
DOI：
10.1103/physrevb.60.r5121
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发表时间：
1999
影响因子：
3.7
通讯作者：
M. Kästner
中科院分区：
文献类型：
--
作者：
B. Voigtländer;M. Kästner
给出了二维Ge层在Si~001！在生长过程中用高温扫描隧道显微镜测量作为Ge覆盖率的函数。应变能随覆盖度的增加而增大，是形成应变释放(23N)重构沟槽和Si/Ge混合的驱动力。用总能量计算和实验结果定量比较了(23N)重构周期的大小，从而估算了表面附近的Si-Ge混合量。@S0163-1829~99 50528-6#
The periodicity of the (2 3 N ) reconstruction of two-dimensional Ge layers on Si ~ 001 ! is measured as a function of the Ge coverage with a high-temperature scanning tunneling microscope during growth. The strain energy, which increases with increasing coverage, is the driving force for the formation of the strain relieving (2 3 N ) reconstruction trenches and Si/Ge intermixing. A quantitative comparison to total-energy calculations predicting the periodicity of the (2 3 N ) reconstruction with the experimental results is used to estimate the amount of Si-Ge intermixing near the surface. @ S0163-1829 ~ 99 ! 50528-6 #