Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region
Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region
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DOI：
10.1143/apex.2.021001
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发表时间：
2009-02-01
影响因子：
2.3
通讯作者：
Yoshikawa, Akihiko
中科院分区：
文献类型：
--
作者：
Che, Songbek;Yuki, Akihiko;Yoshikawa, Akihiko
We propose the fabrication of asymmetric GaN/InN/InGaN/GaN quantum wells (QWs) composed of the following layers in succession: an similar to 1-monolayer-thick InN well grown on a GaN barrier layer, In0.15-0.20Ga0.85-0.80N layer, and a GaN barrier layer; these QWs can be used for the development of blue-green light emitters. An asymmetric-QW light-emitting diode (LED) emits at around 500 nm; and almost no blue shift is observed in the electroluminescence spectra of the LED at different current levels, indicating that the asymmetric QWs can be used in blue-green light emitters, and the quantum-confined Stark effect can be reduced by employing an ultrathin-InN QW structure. (C) 2009 The Japan Society of Applied Physics
