Controllable preparation of rGO/VO2(B) intercalation thin films with high thermal sensitive properties
Controllable preparation of rGO/VO2(B) intercalation thin films with high thermal sensitive properties
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DOI：
10.1016/j.matchemphys.2018.07.030
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发表时间：
2018-10
影响因子：
4.6
通讯作者：
Han Zhang;Sixv Zhu;Beibei Guo;Dongyun Wan-;Hongjie Luo;Yanfeng Gao
中科院分区：
文献类型：
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作者：
Han Zhang;Sixv Zhu;Beibei Guo;Dongyun Wan-;Hongjie Luo;Yanfeng Gao
本工作首次报道了在相对较低的温度(420 °C)下，用简单的溶胶-凝胶法可控地制备RGO/VO2(B)插层薄膜。RGO良好的导电性和导热性可以显著提高用于非制冷红外探测器的VO2(B)薄膜的性能和灵敏度。采用铝还原的方法，在双区加热炉中还原GO/V2O5插层膜中氧化石墨烯(GO)和V2O5的含氧官能团。根据我们的结果，在VO2(B)薄膜中插入了还原GO(RGO)作为电子传递的快速通道，因此rGO/VO2(B)插层薄膜之间的电子转移比纯VO2(B)薄膜的电子转移要快得多。通过调整rGO的掺杂浓度，优化了薄膜的制备工艺，得到了具有合适的电阻温度系数(−2.78%/K)和方阻(21.22 kΩ)的rGO/VO2(B)插层薄膜。我们的工作为解决高真空法制备VO2热敏薄膜的成本和复杂性提供了一种有前景的可行技术。
This work first reports the controllable preparation of rGO/VO2(B) intercalation films via a simple sol-gel method at relative low temperature (420 °C). The excellent conductance and thermal conductivity of rGO could significantly enhance the performance and sensitivity of VO2(B) films to be used for uncooled infrared detectors. Aluminum (Al) reduction is introduced to reduce the oxygen-containing functional groups of graphene oxide (GO) and V2O5of GO/V2O5intercalation films in a two-zone furnace. According to our results, the reduced-GO (rGO), as a fast channel for electron transport, was inserted into the VO2(B) film, and thus the electron transfer between rGO/VO2(B) intercalation films occurs much faster than in pure VO2(B) films. The film preparation processes were optimized through adjusting the doping concentration of rGO, and rGO/VO2(B) intercalation films with applicable temperature coefficient of resistance (TCR) (−2.78%/K) and square-resistance (21.22 kΩ) were achieved. Our work provided a promising and feasible technique to convict the cost and complexity of high vacuum method used to fabricate the VO2thermal sensing thin films.