Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet
Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet
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DOI：
10.1116/1.581999
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发表时间：
1999-09-01
影响因子：
2.9
通讯作者：
Hicks, RF
中科院分区：
文献类型：
--
作者：
Jeong, JY;Babayan, SE;Hicks, RF
在760托和50 - 250 ℃之间，使用大气压等离子体射流以1.0 - 8.0 +/-0.2 μ m/min的速度蚀刻聚酰亚胺膜。等离子体是通过在两个同心电极之间流动氦气和氧气产生的，内电极耦合到13.56 MHz的射频功率，外电极接地。刻蚀速率随氧分压、射频功率和衬底温度的增加而增加。蚀刻的表观活化能为0.16 eV。朗缪尔探针测量显示，离子密度在1 × 10（10）和1 × 10（11）cm（-3）之间，距离供电电极末端5 mm。偏置衬底对速率没有影响。通过发射光谱法在等离子体中检测臭氧、单重态σ亚稳氧（B（1）Sigma（g）（+））和单重态δ亚稳氧（a（1）Delta（g））。通过O原子与O（2）的复合，在流出物中产生更多的臭氧。根据生产率。在6.6 Torr O（2）和200 W功率下，离通电电极6 mm处的O原子浓度估计为7 × 10（14）cm（-3）。有人提出，O原子是参与蚀刻聚酰亚胺的主要反应物种。(C)1999年美国真空学会。[S0734 - 2101（99）01705 - 4]。
An atmospheric-pressure plasma jet has been used to etch polyimide films at 1.0-8.0 +/- 0.2 mu m/min at 760 Torr and between 50 and 250 degrees C. The plasma was produced by flowing helium and oxygen between two concentric electrodes, with the inner one coupled to 13.56 MHz rf power and the outer one grounded. The etch rate increased with the O(2) partial pressure, the rf power and the substrate temperature. The apparent activation energy for etching was 0.16 eV. Langmuir-probe measurements revealed that the ion densities were between 1 x 10(10) and 1 x 10(11) cm(-3), 5 mm from the end of the powered electrode. Biasing the substrate had no effect on the rate. Ozone, singlet sigma metastable oxygen (b (1)Sigma(g)(+)), and singlet delta metastable oxygen (a (1)Delta(g)) were detected in the plasma by emission spectroscopy. More ozone was produced in the effluent through the recombination of O atoms with O(2). Based on the production rate. of O(3), the concentration of O atoms 6 mm from the powered electrode was estimated to be similar to 7 x 10(14) cm(-3) at 6.6 Torr O(2) and 200 W power. It is proposed that O atoms are the principal reactive species involved in etching polyimide. (C) 1999 American Vacuum Society. [S0734-2101(99)01705-4].