Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors
Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors
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AlGaN 基异质结 p-i-n 光电探测器的暗电流和光响应对极化电荷的依赖性
DOI：
10.1002/pssa.201600932
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发表时间：
2017
影响因子：
2
通讯作者：
Zhang Zhi-Wei
中科院分区：
文献类型：
--
作者：
Chen Hai-feng;Chen Yi-Ren;Song Hang;Li Zhi-Ming;Jiang Hong;Li Da-Bing;Miao Guo-Qing;Sun Xiao-Juan;Zhang Zhi-Wei
研究了不同极化电荷对AlGaN基异质结p-i-n紫外探测器性能的影响。发现异质界面处的极化电荷可以增强电场强度并导致增加的暗电流。相反，极化电荷会降低光响应，因为在光吸收层中极化电场的方向与外加电场的方向相反。
The influence of the polarization charges on the properties of AlGaN‐based heterojunction p–i–n ultraviolet photodetectors was investigated. It is found that the polarization charges at the hetero‐interface can enhance the electric field intensity and result in an increased dark current. On the contrary, the polarization charges can lower the photoresponse because the direction of polarization electric field is opposite to the applied electric field in the light absorption layer.