The characterization of aluminum nitride thin films prepared by dual ion beam sputtering
The characterization of aluminum nitride thin films prepared by dual ion beam sputtering
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双离子束溅射氮化铝薄膜的表征
DOI：
10.1016/j.surfcoat.2005.07.046
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发表时间：
2006
影响因子：
5.4
通讯作者：
H. Shih
中科院分区：
文献类型：
--
作者：
Hong;Sheng Han;H. Shih
氮化铝（AlN）薄膜在450 °C和室温下在800和1200 V之间制备。沉积多晶膜，但沿（100）和（002）面沿着织构化。在450 °C下，随着氩离子束电压的增加，AlN（002）逐渐减少。在室温下，AlN（002）在1000 V时减少，然后在1200 V时维持。在450 °C下沉积的AlN薄膜比在室温下沉积的AlN薄膜薄，这可能是由于在一定电压下沉积的AlN薄膜中吸附原子的迁移率较高的原因。随着氩离子束电压和沉积温度的增加，表面粗糙度单调下降。在室温下，β值随氩离子束流电压的增加而稳定下降，但在450 °C时显著下降。所有的β值表明生长稳定并且形成织构。O-1 s光谱的结合能约为532.0 eV，这归因于吸附的水。讨论了氩离子束电压和沉积温度与AlN薄膜微观结构的关系。
Aluminum nitride (AlN) films were prepared between 800 and 1200 V at 450 °C and room temperature. The polycrystalline films were deposited but textured along the (100) and (002) plane. The AlN (002) gradually decreased as the argon ion beam voltages increased at 450 °C. The AlN (002) decreased at 1000 V and then was sustained at 1200 V at room temperature. The AlN film deposited at 450 °C was thinner than that at room temperature at a given voltage, which might account for the higher mobility of the adatoms. The surface roughness decreased monotonously as the argon ion beam voltages and deposition temperature increased. The β-values steadily decreased as the argon ion beam voltages increased at room temperature, but significantly drop at 450 °C. All β-values revealed that the growth is stabilized and a texture is formed. The binding energy of the O-1s spectra was around at 532.0 eV which is attributed to the adsorbed water. The relationship between both the argon ion beam voltages and the deposition temperatures and the microstructure of AlN films is also discussed.