Interlayer resistance of misoriented MoS2.
Interlayer resistance of misoriented MoS2.
复制标题
DOI：
10.1039/c6cp08927e
复制
发表时间：
2016-06
期刊：
影响因子：
--
通讯作者：
K. Zhou;D. Wickramaratne;Supeng Ge;Shanshan Su;A. De;R. Lake
中科院分区：
文献类型：
--
作者：
K. Zhou;D. Wickramaratne;Supeng Ge;Shanshan Su;A. De;R. Lake
过渡金属二硫属化物的层间取向差改变了它们的层间距离、总能量、电子能带结构和振动模式，但其对层间电阻的影响尚不清楚。分析了层间取向差对双层MoS2层间电阻的影响，结果表明，层间取向差使电子电阻率呈指数增长，而空穴电阻率几乎不变。由高对称点处的波函数确定的物理性质在流行的半导体过渡金属二硫属化物（TMD）中是通用的。电子和空穴传输上的取向差的不对称效应可以在诸如双极晶体管的垂直传输器件的设计和优化中利用。密度泛函理论提供了用于电阻率计算的层间耦合单元。
Interlayer misorientation in transition metal dichalcogenides alters their interlayer distance, total energy, electronic band structure, and vibrational modes, but its effect on the interlayer resistance is not known. This study analyzes the interlayer resistance of misoriented bilayer MoS2 as a function of the misorientation angle, and it shows that interlayer misorientation exponentially increases the electron resistivity while leaving the hole resistivity almost unchanged. The physics, determined by the wave functions at the high symmetry points, are generic among the popular semiconducting transition metal dichalcogenides (TMDs). The asymmetrical effect of misorientation on the electron and hole transport may be exploited in the design and optimization of vertical transport devices such as a bipolar transistor. Density functional theory provides the interlayer coupling elements used for the resistivity calculations.