Proton irradiation energy dependence of defect formation in graphene
Proton irradiation energy dependence of defect formation in graphene
复制标题
DOI：
10.1016/j.apsusc.2015.03.107
复制
发表时间：
2015-07-30
影响因子：
6.7
通讯作者：
Lee, Taeyoon
中科院分区：
文献类型：
--
作者：
Lee, Sanggeun;Seo, Jungmok;Lee, Taeyoon
SiO2/Si 上的石墨烯晶体管用 5、10 和 15 MeV 质子以 2 x 10(14) cm(-2) 的剂量率进行辐照。使用拉曼光谱和电学测量来测量质子辐照对石墨烯结构缺陷和电学特性的影响。拉曼光谱在 5 和 10 MeV 质子辐照后表现出由缺陷引起的高强度峰，而在 15 MeV 质子辐照后没有观察到明显的缺陷引起的峰。质子辐照后石墨烯晶体管的漏极电流减小，狄拉克点发生偏移；然而，在 15 MeV 质子照射后，狄拉克点发生平坦化。特性的变化归因于不同类型的石墨烯缺陷，这与转移能量的辐照能量依赖性密切相关。我们的观测结果与贝特公式以及物质模拟结果中离子的停止和范围非常吻合。 (C) 2015 Elsevier B.V. 保留所有权利。
Graphene transistors on SiO2/Si were irradiated with 5, 10, and 15 MeV protons at a dose rate of 2 x 10(14) cm(-2). The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10 MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15 MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15 MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results. (C) 2015 Elsevier B.V. All rights reserved.