Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface
Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface
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DOI：
10.1016/j.apsusc.2008.02.009
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发表时间：
2008-09
影响因子：
6.7
通讯作者：
J. Yoshida;Y. Yonekubo;T. Nakanishi;H. Okado;M. Naitoh;T. Sakata;H. Mori
中科院分区：
文献类型：
--
作者：
J. Yoshida;Y. Yonekubo;T. Nakanishi;H. Okado;M. Naitoh;T. Sakata;H. Mori
研究了真空度对6 H-SiC（0001）表面碳纳米管生长的影响。在1700°C高真空（10 - 2 Pa）退火过程中，在6 H-SiC表面致密均匀地形成了长度约为160 nm的碳纳米管。在超高真空（1010 - 7 Pa）中在1700°C下退火期间形成约1μm长的CNT。在1700°C的空气中，SiC表面未形成碳纳米管，而形成SiO2层。研究发现，在超高真空中可以生长出较长的碳纳米管，而且还可以生长出排列不整齐的低密度石墨层或碳纳米纤维。
We have investigated the influence of the vacuum level upon the growth of carbon nanotubes (CNTs) on 6H–SiC (0001¯) surface. CNTs of about 160nm in length were formed densely and uniformly on the 6H–SiC surface during annealing at 1700°C in a high vacuum (∼10−2Pa). CNTs of about 1μm in length were formed during annealing at 1700°C in an ultra-high vacuum (∼10−7Pa). However, CNTs were not formed and SiO2layers were formed on the SiC surface at 1700°C in air. It is found that longer CNTs can grow up in an ultra-high vacuum, moreover, a little aligned and low-density graphite layers, or carbon nanofibers can also grow up.