Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
复制标题
采用新型高温氧化和退火组合工艺提高 4H-SiC PiN 二极管的性能
DOI：
10.1109/tsm.2014.2336701
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发表时间：
2014
影响因子：
2.7
通讯作者：
P. Mawby
中科院分区：
文献类型：
--
作者：
C. Fisher;M. Jennings;Y. Sharma;D. Hamilton;P. Gammon;A. Pérez‐Tomás;S. M. Thomas;S. Burrows;P. Mawby
本文提出了一种新的高温热氧化和退火相结合的工艺在具有厚漂移区（110 μm）的台面隔离外延阳极4 H-SiC PiN二极管中的应用，其目的是提高4 H-SiC中载流子的寿命。二极管是使用经过该工艺的4 H-SiC材料制造的，该工艺包括在1550°C下在干燥的纯O2中热氧化，然后在相同温度下进行氩气退火。正向电流-电压特性表明，与对照样品PiN二极管相比，氧化/退火样品通常显示出约15%的低正向电压降和约40%的低差分导通电阻（在100 A/cm 2和25°C下），而反向恢复测试表明载流子寿命也增加了约40%。这些发现表明，使用该工艺是一种非常有效和高效的方式来改善高压4 H-SiC双极器件的电特性。
In this paper, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated epitaxial-anode 4H-SiC PiN diodes with thick (110 μm) drift regions is presented, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material having undergone this process, which consisted of a thermal oxidation in dry pure O2 at 1550°C followed by an argon anneal at the same temperature. Forward current-voltage characterization showed that the oxidised/annealed samples typically showed around 15% lower forward voltage drop and around 40% lower differential on-resistance (at 100 A/cm2 and 25°C) compared to control sample PiN diodes, whilst reverse recovery tests indicated a carrier lifetime increase also of around 40%. These findings illustrate that the use of this process is a highly effective and efficient way of improving the electrical characteristics of high voltage 4H-SiC bipolar devices.