Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates
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DOI:
10.1063/1.4963076
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发表时间:
2016-09
期刊:
影响因子:
1.6
通讯作者:
Alexander Shkurmanov;C. Sturm;J. Lenzner;G. Feuillet;F. Tendille;P. Mierry;M. Grundmann
Alexander Shkurmanov;C. Sturm;J. Lenzner;G. Feuillet;F. Tendille;P. Mierry;M. Grundmann
中科院分区:
材料科学4区
文献类型:
--
作者:
Alexander Shkurmanov;C. Sturm;J. Lenzner;G. Feuillet;F. Tendille;P. Mierry;M. Grundmann

文献摘要

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我们报告了通过使用结构化蓝宝石基板来控制纳米针和纳米线倾斜的可能性。所报告策略的优点是沿着相对于表面法线倾斜的单个方向获得良好定向的生长,而其他方向的生长受到抑制。在我们的特定情况下,纳米结构相对于表面法线倾斜 58°。此外,我们还证明,通过使用 SiO2 层,观察到纳米结构形状从纳米针到圆柱形纳米线的变化。
We report the possibility to control the tilting of nanoneedles and nanowires by using structured sapphire substrates. The advantage of the reported strategy is to obtain well oriented growth along a single direction tilted with respect to the surface normal, whereas the growth in other directions is suppressed. In our particular case, the nanostructures are tilted with respect to the surface normal by an angle of 58°. Moreover, we demonstrate that variation of the nanostructures shape from nanoneedles to cylindrical nanowires by using SiO2 layer is observed.