A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers
A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers
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一种用于描绘重掺杂 n 型硅片缺陷的无铬蚀刻剂
DOI：
10.1016/j.mssp.2009.05.004
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发表时间：
2008-08
影响因子：
4.1
通讯作者：
Zeng, Yuheng
中科院分区：
文献类型：
--
作者：
Que, Duanlin;Zeng, Zhidan;Tian, Daxi;Gong, Longfei;Ma, Xiangyang;Yang, Deren;Li, Liben;Zeng, Yuheng
Delineation of defects in the heavily doped n-type Czochralski silicon wafers by preferential etching is an issue not having been essentially solved. Herein, a chromium-free etchant based on HNO3–HF–H2O system, with an optimum volume ratio of [Formula: see text] , has been developed. It can reveal well the defects such as dislocation and oxygen precipitation-induced bulk microdefects (BMDs) in the heavily doped n-type silicon wafers with resistivities even lower than 1mΩcm. Moreover, this etchant is appropriate to delineate the defects on (111), (110) or (100) surface of silicon crystal. Furthermore, the density of oxygen precipitation-induced BMDs in the heavily doped n-type silicon wafers derived from the preferential etching using this newly developed etchant correlates well with that derived from scanning infrared microscopy (SIRM) within its detection limit.
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影响因子：
3.9
作者：
TURNER, DR
通讯作者：
TURNER, DR
影响因子：
3.9
作者：
SCHWARTZ, B;ROBBINS, H
通讯作者：
ROBBINS, H
影响因子：
1.5
作者：
Masaki Majima;Takao Otogawa Takao Otogawa-Takao-Otogawa;Yutaka Kitagawara Yutaka Kitagawara-Yutaka-Kitagawara
通讯作者：
Masaki Majima;Takao Otogawa Takao Otogawa-Takao-Otogawa;Yutaka Kitagawara Yutaka Kitagawara-Yutaka-Kitagawara
影响因子：
3.9
作者：
KLEIN, DL;DSTEFAN, DJ
通讯作者：
DSTEFAN, DJ
影响因子：
3.9
作者：
SCHWARTZ, B;ROBBINS, H
通讯作者：
ROBBINS, H