Metal-insulator transition and charge ordering in the extended Hubbard model at one-quarter filling
Metal-insulator transition and charge ordering in the extended Hubbard model at one-quarter filling
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四分之一填充时扩展哈伯德模型中的金属-绝缘体转变和电荷排序
DOI：
10.1103/physrevb.66.195102
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发表时间：
2002
影响因子：
3.7
通讯作者：
U. Queensland
中科院分区：
文献类型：
--
作者：
M. Calandra;J. Merino;Ross H. McKenzie Max;U. Queensland
利用精确对角化方法研究了正方形晶格上四分之一填充扩展Hubbard模型的零温性质。我们发现，增加的比例的站点间库仑排斥，V，带宽驱动系统从金属到电荷有序绝缘体。随着V的增加的光学电导率谱的演变与观察到的具有θ和β晶体结构的几个层状分子晶体的光学电导率一致。
We study, with exact diagonalization, the zero temperature properties of the quarter-filled extended Hubbard model on a square lattice. We find that increasing the ratio of the intersite Coulomb repulsion, V, to the bandwidth drives the system from a metal to a charge ordered insulator. The evolution of the optical conductivity spectrum with increasing V is in agreement with the observed optical conductivity of several layered molecular crystals with the theta and beta crystal structures.