A low noise FET with integrated charge restoration for radiation detectors
A low noise FET with integrated charge restoration for radiation detectors
复制标题
用于辐射探测器的具有集成电荷恢复功能的低噪声 FET
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
G. White
中科院分区：
文献类型：
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作者：
T. Nashashibi;G. White
描述了一种用于电荷敏感放大器和辐射探测器的新型脉冲非光学复位技术。第一级 FET 和电荷恢复被集成到一个称为 Pentafet 的五端器件中。少数载流子脉冲直接注入 FET 的沟道中。该技术速度快，并且对 FET 的操作没有后遗症。即使在高计数率下也能实现极低的噪声性能。通过在来自 Sr-90 β 源的高能电子存在下和在透射电子显微镜中分析 Mn X 射线，证明了该器件的高能率产物能力。 >
A novel pulsed, nonoptical, reset technique for use in charge-sensitive amplifiers and radiation detectors is described. The first-stage FET and charge restoration are integrated into one five-terminal device called the Pentafet. A pulse of minority carriers is injected directly into the channel of the FET. The technique is fast, and there are no aftereffects on the operation of the FET. Very low noise performance is achieved, even at high count rates. The high energy rate product capability of the device is demonstrated by analyzing Mn X-rays in the presence of high-energy electrons from an Sr-90 beta source and in a transmission electron microscope. >