Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin films

Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin films
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DOI:
10.1021/cm00029a007
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发表时间:
1993-05
影响因子:
8.6
通讯作者:
R. Fix;R. Gordon;D. M. Hoffman
R. Fix;R. Gordon;D. M. Hoffman
中科院分区:
材料科学2区
文献类型:
--
作者:
R. Fix;R. Gordon;D. M. Hoffman

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采用常压化学气相沉积法,在较低的衬底温度(200-400℃)下,以均一的二烷基胺金属络合物和氨气相沉积的方法快速合成了钒、铌和氮化钽薄膜。在硅、玻璃、玻碳和硼衬底上成功地进行了沉积。该薄膜与基材具有良好的结合力,且耐化学性。用卢瑟福背散射光谱、X射线光电子能谱、椭偏仪和透射电子显微镜对薄膜进行了表征。还记录了氮化钽薄膜的反射光谱和透射谱。用氢气前向反冲散射法测定了薄膜中的氢含量。氮化钒涂层为稍富氮的VN(N/M比为1.05~1.15)。它们在沉积时是多晶的,并显示出金属性能。氮化Nb薄膜的N/M比为1.35[+]0.05,经反射和导电后呈金黄色。相比之下,氮化钽薄膜的N/M比为1.7[正负]0.1,透明,透射率和绝缘性能为淡黄色。化学计量和物理性质表明薄膜由Ta[sub3]N[sub5]组成。薄膜的氢含量随着沉积温度的升高而减少,但都有大量的氢存在。参考文献26,图5,表4。
Vanadium, niobium, and tantalum nitride thin films were synthesized from homoleptic dialkylamido metal complexes and ammonia by atmospheric pressure chemical vapor deposition with high growth rates at low substrate temperatures (200-400[degrees]C). Depositions were successfully carried out on silicon, glass, vitreous carbon, and boron substrates. The films showed good adhesion to the substrates and were chemically resistant. The films were characterized by Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, ellipsometry, and transmission electron microscopy. Reflectance and transmission spectra for the tantalum nitride films were also recorded. Hydrogen in the films was determined by hydrogen forward recoil scattering spectrometry. The vanadium nitride coatings were slightly nitrogen-rich VN (N/M ratio 1.05-1.15). They were polycrystalline as deposited and displayed metallic properties. The niobium nitride films had N/M ratios of 1.35 [plus minus] 0.05 and were golden colored by reflection and conducting. In contrast, the tantalum nitride films had N/M ratios of 1.7 [plus minus] 0.1 and were transparent, pale yellow colored in transmission and insulating. The stoichiometry and physical properties suggest that the films consist of Ta[sub 3]N[sub 5]. The hydrogen content of the films diminished as the deposition temperature increased, but all had significant amounts of hydrogen present. 26 refs., 5 figs., 4 tabs.