Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams

Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams
复制标题

使用单能正电子束研究 GaN 塑性变形引入的空位型缺陷

DOI:
10.1063/1.4819798
复制
发表时间:
2013
期刊:
J. Appl. Phys.
影响因子:
--
通讯作者:
S. Ishibashi and Y. Ohno
S. Ishibashi and Y. Ohno
中科院分区:
--
文献类型:
--
作者:
A. Uedono;I. Yonenaga;T. Watanabe;S. Kimura;N. Ohsaima;R. Suzuki;S. Ishibashi and Y. Ohno

文献摘要

相似文献