Fe2+/Fe3+ Doped into MAPbCI3 Single Crystal: Impact on Crystal Growth and Optical and Photoelectronic Properties
Fe2+/Fe3+ Doped into MAPbCI3 Single Crystal: Impact on Crystal Growth and Optical and Photoelectronic Properties
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Fe2 /Fe3 掺杂到 MAPbCI(3) 单晶中：对晶体生长以及光学和光电性能的影响
DOI：
10.1021/acs.jpcc.8b12428
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发表时间：
2019-01-24
影响因子：
3.7
通讯作者：
Shi, Guodong
中科院分区：
文献类型：
--
作者：
Cheng, Xiaohua;Jing, Lin;Shi, Guodong
MAPbX（3）作为一种有机-无机杂化钙钛矿结构的卤化铅化合物，因其优异的性能在光电器件方面的应用引起了人们极大的兴趣。然而，铅的毒性被认为是造成环境污染的最大问题。有意识地引入杂质离子以取代晶体结构中的Pb被认为是在最大化能量转换效率的同时最小化铅毒性的影响的有效方式。另一方面，铁（Fe）杂质是存在于原料中的不可避免的杂质。然而，铁离子对晶体结构和光电性能的影响仍然是未知的。因此，研究Fe 2 +/Fe 3+对混合卤化铅钙钛矿结构的影响具有重要意义。本文首次将Fe ~（2+）/Fe ~（3+）引入MAPbCl（3）单晶晶格中，成功地生长了不同Fe ~（2+）/Fe ~（3+）掺杂浓度（0、10、20%）的MAPbCl（3）单晶，并报道了Fe ~（2+）/Fe ~（3+）掺杂MAPbCl（3）单晶的生长过程、晶体结构和光学性质。利用平面光电探测器研究了掺杂Fe ~（2+）/Fe ~（3+）对MAPbCl（3）单晶光电性能的影响。
As one type of organic inorganic hybrid lead halide perovskites, MAPbX(3) has attracted immense interests in applications of optoelectronic devices because of its remarkable properties. However, the toxicity of lead is considered as the biggest concern which cause environment pollution. The introduction of impurity ions deliberately to replace Pb in the crystal structure is deemed to be an effective way to minimize the effect of lead toxicity while maximizing energy conversion efficiency. On the other hand, iron (Fe) impurities are inevitable impurities present in raw materials. However, the influence of Fe ions on both crystal structure and photoelectric properties is still unknown. So, it is worth exploring the effects of heterovalent Fe2+/Fe3+ on hybrid lead halide perovskite. Here, we first incorporate Fe2+/Fe3+ into the crystal lattice of MAPbCl(3) single crystals, and we have successfully grown MAPbCl(3) single crystals with various doping concentrations of Fe2+/Fe3+ (0, 10, 20%) and report the crystal growth process, crystal structures, and optical properties of MAPbCl(3) single crystals doped with Fe2+/Fe3+. Moreover, the effect of Fe2+/Fe3+ incorporated into MAPbCl(3) single crystals on the optoelectronic properties was investigated by utilizing planar photodetectors.