InP-based quantum cascade lasers monolithically integrated onto silicon
InP-based quantum cascade lasers monolithically integrated onto silicon
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DOI：
10.1364/oe.26.022389
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发表时间：
2018-08-20
期刊：
影响因子：
3.8
通讯作者：
Lyakh, Arkadiy
中科院分区：
文献类型：
--
作者：
Go, Rowel;Krysiak, H.;Lyakh, Arkadiy
报道了一种基于40级InP量子级联激光器结构的脊波导器件，该结构生长在6英寸的硅衬底上，并带有变质缓冲器。在概念验证实验中使用的结构具有典型的设计，包括Al0.78In0.22As/In0.73Ga0.27As应变平衡组合物，在量子阱和势垒中相对于InP都具有高应变，以及总厚度为8微米的全InP波导。尺寸为3 mm×40微米的器件，具有高反射的背面涂层，在4.35微米发射，在78K时具有大约2.2A的阈值电流，观察到高达170K的激光。与先前证明的单片集成在GaAs上的InP基量子级联激光器相比，同样集成在硅上的激光器结构具有较低的成品率和可靠性。表面形貌分析表明，通过降低有源区层相对于围绕激光器芯的InP体波导层的应变，可以显著改善这两种情况。(C)《OSA开放获取出版协议》条款下的2018年美国光学学会
Lasing is reported for ridge-waveguide devices processed from a 40-stage InPbased quantum cascade laser structure grown on a 6-inch silicon substrate with a metamorphic buffer. The structure used in the proof-of-concept experiment had a typical design, including an Al0.78In0.22As/In0.73Ga0.27As strain-balanced composition, with high strain both in quantum wells and barriers relative to InP, and an all-InP waveguide with a total thickness of 8 mu m. Devices of size 3 mm x 40 mu m, with a high-reflection back facet coating, emitted at 4.35 mu m and had a threshold current of approximately 2.2 A at 78 K. Lasing was observed up to 170 K. Compared to earlier demonstrated InP-based quantum cascade lasers monolithically integrated onto GaAs, the same laser structure integrated on silicon had a lower yield and reliability. Surface morphology analysis suggests that both can be significantly improved by reducing strain for the active region layers relative to InP bulk waveguide layers surrounding the laser core. (C) 2018 Optical Society of America under the terms oldie OSA Open Access Publishing Agreement