Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si
Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si
复制标题
应力对本征硅和掺杂硅固相外延影响的时间分辨测量
DOI：
10.1063/1.1386399
复制
发表时间：
2001
影响因子：
4
通讯作者：
M. Aziz
中科院分区：
文献类型：
--
作者：
W. Barvosa;M. Aziz
利用时间分辨反射率测量了外部施加的相内应力对本征和掺b硅固相外延生长速率的影响。在本征材料和掺杂b材料中，用浓度函数、温度的Arrhenius函数和应力与激活应变V*乘积中的玻尔兹曼因子（V11*分别=（+0.14±0.04）和（+0.17±0.02）倍原子体积）对数据进行了现象学描述。
The effect of externally applied in-phase stresses on the solid-phase epitaxial growth rate of both intrinsic and B-doped Si has been measured using time-resolved reflectivity. The data are described phenomenologically by a product of a function of concentration, an Arrhenius function of temperature, and a Boltzmann factor in the product of the stress and the activation strain V*, with V11*=(+0.14±0.04) and (+0.17±0.02) times the atomic volume, in intrinsic and B-doped material, respectively.