N‐type doped nano‐diamond in a first MEMS application
N‐type doped nano‐diamond in a first MEMS application
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DOI：
10.1002/pssa.200671114
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发表时间：
2006-09
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影响因子：
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通讯作者：
M. Dipalo;J. Kusterer;K. Janischowsky;E. Kohn
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文献类型：
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作者：
M. Dipalo;J. Kusterer;K. Janischowsky;E. Kohn
纳米金刚石具有优异的机械、电学和电化学性能，是MEMS应用领域的重要材料。目前的掺杂选择是硼，导致p型导电。它有两个困难：首先，在高浓度（如完全激活所需的）下，晶格变得高度受应力，并且可能降低材料的质量。其次，它污染生长室，导致记忆效应。最近的替代方案是n型氮掺杂，避免了这些缺点。然而，氮主要结合在晶界中，因此不均匀地分布。反过来，这可能会限制材料的稳定性。在这里，我们提出了第一次试验，使用氮掺杂纳米晶金刚石（NCD），通过热灯丝CVD生长，在水微射流作为加热器元件。即使在高功率下也没有遇到稳定性问题。（© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Nanocrystalline diamond is an interesting material for MEMS applications especially due to its outstanding mechanical, electrical and electrochemical properties. The current choice for doping is boron, resulting in p‐type conduction. It has two difficulties: firstly, at high concentration (as needed for full activation) the lattice becomes highly stressed and may degrade the material's quality. Secondly, it contaminates the growth chamber, resulting in a memory effect. A recent alternative is n‐type nitrogen doping, avoiding these disadvantages. However, nitrogen is mainly incorporated in the grain boundaries and thus inhomogeneously distributed. In turn this may limit the material's stability. Here we present a first trial to use nitrogen‐doped nanocrystalline diamond (NCD), grown by hot filament CVD, in a water microjet as heater element. No stability problems were encountered even at high overdrive power. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)