Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth
Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth
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DOI：
10.1107/s1600576714023061
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发表时间：
2014-12
影响因子：
6.1
通讯作者：
Eva‐Regine Carl;A. Danilewsky;E. Meissner;T. Geiger
中科院分区：
文献类型：
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作者：
Eva‐Regine Carl;A. Danilewsky;E. Meissner;T. Geiger
基于电子背散射衍射和同步加速器x射线形貌（SXRT）测量，对小体积多晶硅的双晶界、大角晶界和小角晶界进行了详细的研究。为了获得晶体生长过程中晶界演变的信息，分析了来自定向凝固硅柱的两个相邻晶圆的相同区域（约6 mm2）。因此，重点放在一种特定谷物及其邻近谷物的演变上。在‘直线’ Σ3晶界的情况下，如果孪晶面对应于{211}面，则没有观察到变化。非直线晶界变化显著：弯曲的Σ3晶界的形成和消除非常频繁，而Σ9和Σ27a晶界的变化很小。通过SXRT成像，分析晶粒的微观结构显示出大量的小角度晶界，其角度在0.003 ~ 0.02°之间，对应于理论位错密度为107 ~ 108 cm−2。实验证明，小角晶界随着大角晶界的扩展而扩大，而小角晶界在生长过程中消失。
A detailed study of twin-, large-angle and small-angle grain boundaries over a small volume of multi-crystalline silicon is presented on the basis of electron backscatter diffraction and synchrotron X-ray topography (SXRT) measurements. Identical areas (ca 6 mm2) of two nearest neighbour wafers from a directional solidified Si column were analysed in order to gain information about the evolution of grain boundaries during the crystal growth process. Therefore, the emphasis was placed on the evolution of one particular grain and its neighbouring grains. In the case of `straight line' Σ3 grain boundaries, no change is observed if the twin plane corresponds to a {211} plane. Significant changes are found for non-straight line boundaries: while curved Σ3 grain boundaries are formed and eliminated very frequently, the Σ9 and Σ27a grain boundaries undergo only minor changes. By means of SXRT imaging, it is shown that the microstructure of the analysed grain exhibits numerous small-angle grain boundaries with angles in the range between 0.003 and 0.02°, corresponding to a theoretical dislocation density of the order of 107–108 cm−2. The experiments give evidence that the small-angle grain boundaries with the larger angles extend, while those with smaller angles vanish during growth.