Deep reactive ion etch conditioning recipe
Deep reactive ion etch conditioning recipe
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深层反应离子蚀刻调理配方
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
N. Chen
中科院分区：
文献类型：
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作者：
M. Wasilik;N. Chen
深反应离子刻蚀（DRIE）历来被认为是一种具有固有可变响应的工艺。这些变化的响应包括蚀刻速率、掩模选择性、整个晶片上的蚀刻深度均匀性以及被蚀刻特征的整体轮廓。有几个因素被认为有助于这种观察到的变化。其中包括工艺温度差异和反应室本身内的残留寄生化合物。进行了一项长期实验，以检查使用和不使用专门定义的预处理调节配方的DRIE运行之间的统计差异。该配方的开发具有双重效果：第一个作用是将处理室“预热”到稳态温度，第二个作用是去除室内的残留有机化合物，否则这些残留有机化合物可能会增加后续DRIE工艺的差异。预处理配方的持续时间约为30分钟。所执行的实验的结果将清楚地表明，在处理之前运行的该调节配方减少了DRIE处理的典型方差。
Deep Reactive Ion Etch (DRIE) has historically been regarded as a process possessing inherent variable response. These varying responses include etch rate, mask selectivity, etch depth uniformity across the wafer, and the overall profile of the features being etched. Several factors are thought to lend themselves to this observed variation. Among them are process temperature disparities and residual parasitic compounds within the reaction chamber itself. A long term experiment was carried out to examine the statistical difference between DRIE runs with and without a specially defined pre-process conditioning recipe. This recipe was developed with the expectations of serving a twofold effect: the first serving as a “warm-up” of the process chamber to a steady state temperature, and the second being a stripping of residual organic compounds within the chamber that might otherwise add variance to the following DRIE process. The pre-process recipe has duration of ~30 minutes. The results of the experiment performed will clearly show that this conditioning recipe run prior to processing reduces the typical variance of DRIE processing.