Extended-wavelength InGaAsSb infrared unipolar barrier detectors
Extended-wavelength InGaAsSb infrared unipolar barrier detectors
复制标题
扩展波长 InGaAsSb 红外单极势垒探测器
DOI：
10.1063/1.5026839
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发表时间：
2018
期刊：
影响因子：
1.6
通讯作者：
Zhichuan Niu
中科院分区：
文献类型：
--
作者：
Hongyue Hao;Guo;Xi Han;D. Jiang;Yao;Chun;W. Xiang;Ying;Zhichuan Niu
介绍了一种室温下工作的InGaAsSb红外单极势垒探测器。采用GaSb晶格匹配的InGaAsSb吸收层和AlGaAsSb单极势垒的探测器可以实现高材料质量和低暗电流。在77 K、0偏压下，暗电流密度为2.29×10- 5A/cm ~ 2。在室温下，零偏压下的暗电流为4×10- 3A/cm 2，R 0A高达44 Ω ·cm 2。我们在InGaAsSb吸收层中制作了锥形阵列，以减少辐射的反射，并将光谱响应扩展到可见光区。扩展波长检测器的响应波长为0.4 μm。进一步的实验表明，在室温下，锥阵列也降低了探测器的暗电流。
We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2 at 0 bias at 77K. At room temperature the dark current at 0 bias was 4×10-3 A/cm2 and the R0A is high to 44 Ω · cm2. We fabricated the cone arrays in the InGaAsSb absorb layer to reduce the reflection of the radiation and extend the spectrum response to visible area. The extended-wavelength detector had the response from the wavelength of 0.4 μm. Further experiment showed the cone arrays also reduced the dark current of the detector at room temperature.