Nitrogen-Doped 4H Silicon Carbide Single-Crystal Electrode for Selective Electrochemical Sensing of Dopamine.
Nitrogen-Doped 4H Silicon Carbide Single-Crystal Electrode for Selective Electrochemical Sensing of Dopamine.
复制标题
用于多巴胺选择性电化学传感的氮掺杂 4H 碳化硅单晶电极。
DOI:
10.1021/acs.analchem.2c03609
复制
发表时间:
2023
影响因子:
7.4
通讯作者:
Zeng,Xiangqun
中科院分区:
文献类型:
--
作者:
Fathi,Fatemeh;Sueoka,Brandon;Zhao,Feng;Zeng,Xiangqun
In this work, we designed, fabricated, and characterized the first nitrogen (N)-doped single-crystalline 4H silicon carbide (4H-SiC) electrode for sensing the neurotransmitter dopamine. This N-doped 4H-SiC electrode showed good selectivity for redox reactions of dopamine in comparison with uric acid (UA), ascorbic acid (AA), and common cationic ([Ru(NH3)6]3+), anionic ([Fe(CN)6]3–), and organic (methylene blue) redox molecules. The mechanisms of this unique selectivity are rationalized by the unique negative Si valency and adsorption properties of the analytes on the N-doped 4H-SiC surface. Quantitative electrochemical detection of dopamine by the 4H-SiC electrode was achieved in the linear range from 50 nM to 10 μM with a detection limit of 0.05 μM and a sensitivity of 3.2 nA.μM–1in a pH = 7.4 phosphate buffer solution. In addition, the N-doped 4H-SiC electrode demonstrated excellent electrochemical stability. This work forms the foundation for developing 4H-SiC as the next-generation robust and biocompatible neurointerface material for a broad range of applications such as the in vivo sensing of neurotransmitters.