Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions
Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions
复制标题
交换偏置存储层磁隧道结中的热辅助切换
DOI：
10.1109/tmag.2004.830395
复制
发表时间：
2004
影响因子：
2.1
通讯作者：
J. Nozieres
中科院分区：
文献类型：
--
作者：
I. Prejbeanu;W. Kula;K. Ounadjela;R. Sousa;O. Redon;Bernard Dieny;J. Nozieres
提出了一种基于隧道结的磁随机存取存储单元热辅助写入方法。隧道结的磁性层都与反铁磁层交换偏置，参考层的阻塞温度比存储层高得多。在工作模式下，通过结发送的电流脉冲产生足够的热量，使存储层的温度高于其阻塞温度，而不影响基准层的钉住。这个概念在这里演示了一个使用均匀外磁场的孤立结。
A thermally assisted writing procedure is proposed in a tunnel junction based magnetic random access memory cell. The magnetic layers of the tunnel junction are both exchange-biased with antiferromagnetic layers, the reference layer having a much higher blocking temperature than the storage layer. In the operating mode, a current pulse sent through the junction generates enough heat to raise the temperature of the storage layer above its blocking temperature, without affecting the pinning of the reference layer. The concept is demonstrated here for an isolated junction using an homogeneous external magnetic field.