Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window
Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window
复制标题
具有陡峭亚阈值斜率和大存储窗口的隧道场效应晶体管电荷捕获存储器
DOI：
10.7567/jjap.57.04fe07
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发表时间：
2018
影响因子：
1.5
通讯作者：
Tetsu Tanaka
中科院分区：
文献类型：
--
作者：
H. Kino;T. Fukushima;Tetsu Tanaka
电荷俘获存储器需要提高每个单元的位密度以及更大的存储窗口以实现低功耗运行。隧穿场效应晶体管（TFET）由于其陡峭的亚阈值斜率能够实现提高每个单元的位密度。此外，TFET结构具有不对称结构，这对于实现更大的存储窗口很有前景。具有N型栅极的TFET在P型源极和N型栅极边缘之间显示出比传统场效应晶体管结构更高的电场。这种高电场使得大量电荷能够注入到电荷存储层中。在这项研究中，我们制造了具有TFET结构的硅 - 氧化物 - 氮化物 - 氧化物 - 半导体（SONOS）存储器件，并观察到了陡峭的亚阈值斜率和更大的存储窗口。
Charge-trapping memory requires the increase of bit density per cell and a larger memory window for lower-power operation. A tunnel field-effect transistor (TFET) can achieve to increase the bit density per cell owing to its steep subthreshold slope. In addition, a TFET structure has an asymmetric structure, which is promising for achieving a larger memory window. A TFET with the N-type gate shows a higher electric field between the P-type source and the N-type gate edge than the conventional FET structure. This high electric field enables large amounts of charges to be injected into the charge storage layer. In this study, we fabricated silicon–oxide–nitride–oxide–semiconductor (SONOS) memory devices with the TFET structure and observed a steep subthreshold slope and a larger memory window.