Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)“ 16×2 ” surfaces
Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)“ 16×2 ” surfaces
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Si(110)—16—2—表面电子结构的自旋和角度分辨光发射研究
DOI：
10.1103/physrevb.100.075302
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发表时间：
2019
影响因子：
3.7
通讯作者：
Flavell, W. R.
中科院分区：
文献类型：
--
作者：
Lewis, N. K.;Lassailly, Y.;Martinelli, L.;Vobornik, I.;Fujii, J.;Bigi, C.;Brunkow, E.;Clayburn, N. B.;Gay, T. J.;Flavell, W. R.
用自旋和角分辨光电子能谱研究了Si（110）"”双畴、单畴和表面的电子结构。角分辨光电发射是使用水平和垂直偏振的光子进行的。带色散图显示了四个表面状态（至），这是分配给硅悬空键的基础上测得的结合能和水平和垂直光偏振之间的光电子发射强度的变化。在Si（110）"”重构中观察到的三个表面态（、和）被归属于Si吸附原子和存在于波纹平台结构边缘的Si原子。在Si（110）"”和能带图中只观察到四种表面态中的一种，因此归因于作为Si（110）"”和表面组分的普遍的Si之字形链。体带区域中的状态归因于面内键。所有数据都符合Si（110）"”表面的原子屈曲模型。虽然室温下测量的和在统计上与零相容，但对映体A型和B型Si（110）"”表面的测量给出了大约1.5%的小平均偏振，其符号相反。在A型Si（110）"”表面上进一步测量得到了更小的%值。因此，纵向极化的上限可以取为。
The electronic structure of Si(110)“” double-domain, single-domain, andsurfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures ofand. Angle-resolved photoemission was conducted using horizontally and vertically polarizedandphotons. Band-dispersion maps revealed four surface states (to) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarizations. Three surface states (, and), observed in the Si(110)“” reconstruction, were assigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of the four surface states,, was observed in both the Si(110)“” andband maps and consequently attributed to the pervasive Si zigzag chains that are components of both the Si(110)“” andsurfaces. A state in the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-buckling model of the Si(110)“” surface. Whilst room temperature measurements ofandwere statistically compatible with zero,measurements of the enantiomorphic A-type and B-type Si(110)“” surfaces gave small average polarizations of around 1.5% that were opposite in sign. Further measurements aton A-type Si(110)“” surfaces gave a smaller value of%. An upper limit ofmay thus be taken for the longitudinal polarization.