Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
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DOI：
10.1063/1.3633100
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发表时间：
2011-08-29
影响因子：
4
通讯作者：
Hosono, Hideo
中科院分区：
文献类型：
--
作者：
Ide, Keisuke;Kikuchi, Yutomo;Hosono, Hideo
非晶 In-Ga-Zn-O (a-IGZO) 薄膜晶体管 (TFT) 的工作特性通过 O(3) 退火温度改善至 217 mV (decade)(-1) 的亚阈值电压摆幅 (S)、接近 11.4 cm(2) (Vs)(-1) 的迁移率和 0.1 V 的阈值电压 (V(th))。 低至150摄氏度。然而，300摄氏度的O(3)退火导致严重的劣化，并表现出大S状态和大Vth状态之间的双稳态转变。这种转变归因于过量氧的掺入以及具有负 U 特性的相关亚间隙缺陷。它还解释了为什么在高氧压力下沉积的 a-IGZO 通道不会产生工作 TFT。 (C) 2011 年美国物理研究所。 [doi:10.1063/1.3633100]
Operation characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) were improved to a subthreshold voltage swing (S) of 217 mV (decade)(-1), a mobility of similar to 11.4 cm(2) (Vs)(-1), and a threshold voltage (V(th)) of 0.1 V by O(3) annealing at a temperature as low as 150 degrees C. However, the O(3) annealing at 300 degrees C caused serious deterioration and exhibited a bistable transition between a large S state and a large Vth state. This transition is attributed to incorporation of excess oxygen and associated subgap defects with a negative-U characteristic. It also explains why a-IGZO channels deposited at high oxygen pressures do not produce operating TFTs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3633100]