Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy
Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy
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DOI：
10.1063/1.1804238
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发表时间：
2004-10
影响因子：
4
通讯作者：
O. Takeuchi;Masahiro Aoyama;R. Oshima;Y. Okada;H. Oigawa;N. Sano;H. Shigekawa;R. Morita;M. Yamashita
中科院分区：
文献类型：
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作者：
O. Takeuchi;Masahiro Aoyama;R. Oshima;Y. Okada;H. Oigawa;N. Sano;H. Shigekawa;R. Morita;M. Yamashita
利用超短脉冲激光与扫描隧道显微镜相结合的振荡脉冲对方法，实现了亚皮秒范围内的时间分辨隧道电流测量。低温生长的GaNxAs 1 −x（x=0.36%）样品在时间分辨隧道电流信号中表现出两个超快瞬态过程，其寿命分别为0.653±0.025和55.1±5.0ps。这些值与在常规泵浦-探测反射率测量中测量的值具有相同的数量级。
Time-resolved tunneling current measurement in the subpicosecond range was realized by ultrashort-pulse laser combined scanning tunneling microscopy, using the shaken-pulse-pair method. A low-temperature-grown GaNxAs1−x(x=0.36%) sample exhibited two ultrafast transient processes in the time-resolved tunnel current signal, whose lifetimes were determined to be 0.653±0.025 and 55.1±5.0ps. These values are of the same order of magnitude as those measured in the conventional pump–probe reflectivity measurement.