Preparation and Properties of Vacuum-deposited Germanium Thin Films
Preparation and Properties of Vacuum-deposited Germanium Thin Films
复制标题
真空沉积锗薄膜的制备及性能
DOI：
10.1143/jjap.2.629
复制
发表时间：
1963
影响因子：
1.5
通讯作者：
Kiyoshi Takahashi
中科院分区：
文献类型：
--
作者：
Y. Sakai;Kiyoshi Takahashi
采用高真空热蒸发法在高温Pyrex玻璃、云母和单晶锗衬底上制备了锗薄膜。所制备的薄膜的电学特性对衬底温度最为敏感。在450°C ~ 550°C的衬底温度下可以获得优良的锗膜。用电子衍射分析了它们的晶体结构，并测量了它们的电特性。发现锗与磷或砷同时蒸镀可以制备出N型锗薄膜。描述了这种N型薄膜的特性，并简要讨论了施主杂质的掺杂工艺。本文叙述了用这种方法制备的P-N结光电池、隧道二极管和压阻元件的性能。
Germanium thin films have been prepared on hot Pyrex glass, mica, and single-crystal germanium substrates by thermal evaporation in high vacuum. The electrical characteristics of the prepared films are most sensitive to the substrate temperature. Excellent germanium film can be obtained at substrate temperatures between 450°C and 550°C. Their crystalline structures were examined by electron diffraction and the electrical characteristics were measured. It was found that N-type germanium film can be prepared if germanium and phosphorus or arsenic are evaporated at the same time. The properties of such N-type films are described, and the doping process with donor impurity is discussed briefly. The properties of a P-N junction photocell, a tunnel diode, and a piezoresistive element thus prepared are described.