Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces
Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces
复制标题
掺杂剂原子分布的纳米级波动：掺杂剂引起的点和电子界面的粗糙度
DOI：
10.1116/1.1771680
复制
发表时间：
2004
影响因子：
1.4
通讯作者：
E. Weber
中科院分区：
文献类型：
--
作者：
P. Ebert;N. D. Jäger;K. Urban;E. Weber
我们研究了掺杂原子分布的纳米尺度起伏对p-n结电子界面粗糙度的影响以及对形成电子分离的掺杂剂感应点的影响。结果表明，每个带电掺杂原子周围的屏蔽场和一团掺杂原子诱导出两个独立的粗糙度分量，这两个分量远大于底层冶金界面的粗糙度。这导致电荷载流子耗尽区局部延伸穿过整个名义上均匀的掺杂层，其层厚度接近团簇尺寸。结果表明，掺杂的团簇通过形成电子分离的掺杂感应点而强烈地限制了未来器件的尺寸，这导致了电流-电压特性的剧烈变化。
We investigated the effect of nanoscale fluctuations in the distribution of dopant atoms on the roughness of electronic interfaces of p–n junctions and on the formation of electronically separated dopant-induced dots. It is shown that the screening fields around each charged dopant atom and a clustering of dopant atoms induce two separate roughness components, which are much larger than the roughness of the underlying metallurgical interface. This leads to charge carrier depleted zones extending locally through the entire nominally homogeneously doped layer for layer thicknesses close to the cluster dimension. The results demonstrate that the clustering of dopants strongly limits the size of future devices by forming electronically separated dopant-induced dots, which introduce drastic changes in the current–voltage characteristics.
影响因子：
64.8
作者：
Voyles, PM;Muller, DA;Gossmann, HJL
通讯作者：
Gossmann, HJL