Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
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DOI：
10.1021/ja8089922
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发表时间：
2009-03-18
影响因子：
15
通讯作者：
Kawai, Tomoji
中科院分区：
文献类型：
--
作者：
Oka, Keisuke;Yanagida, Takeshi;Kawai, Tomoji
我们首次在单晶NiO异质结构纳米线中展示了非易失性双极电阻存储器开关。自组装的NiO纳米线有望开辟机会，探索不仅详细的NiO电阻存储器开关的纳米级机制，但也下一代纳米级非易失性存储器设备的高密度器件集成和改进的存储器特性的潜力。
We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscate mechanisms in NiO resistive memory switching but also next-generation nanoscate nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.