Calibrated in-vacuum quantum efficiency system for metallic and III-V thin-film photocathodes
Calibrated in-vacuum quantum efficiency system for metallic and III-V thin-film photocathodes
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DOI：
10.1116/6.0002904
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发表时间：
2023-12
期刊：
影响因子：
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通讯作者：
Atif Rasheed;C. Benjamin;Ibrahim G. Elhoussieny;Y. Ramachers;G. R. Bell
中科院分区：
文献类型：
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作者：
Atif Rasheed;C. Benjamin;Ibrahim G. Elhoussieny;Y. Ramachers;G. R. Bell
本文介绍了用于薄膜生长和量子效率原位测量的高真空系统的结构和标定。支持通过原位氩离子溅射和退火进行表面清洁。QE测量基于外部265 nm LED和原位正偏置集电栅。该系统适用于两个金属和两个半导体光电阴极：多晶银和铜，和单晶InP和InSb。表面清洁协议显示出对所有这些材料的QE有显着的影响。干净的InSb和InP的最大QE值约为8 × 10−5，Cu为9 × 10−5，Ag为2 × 10−4。
The construction and calibration of a high vacuum system for thin film growth and in situ quantum efficiency (QE) measurement are described. Surface cleaning by in situ argon ion sputtering and annealing is supported. The QE measurement is based on an external 265 nm LED and in situ positively biased collector grid. The system is applied to two metallic and two semiconducting photocathodes: polycrystalline silver and copper, and single crystal InP and InSb. Surface cleaning protocols are shown to have a dramatic effect on the QE for all of these materials. The maximum QE values achieved for clean InSb and InP are around 8 × 10−5, for Cu 9 × 10−5 and for Ag 2 × 10−4.