Impurity‐induced layer disordering in In0.5(Alx Ga1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers
Impurity‐induced layer disordering in In0.5(Alx Ga1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers
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In0.5(Alx Ga1−x)0.5P-InGaP量子阱异质结构中杂质引起的层无序：可见光谱掩埋异质结构激光器
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
M. Craford
中科院分区：
文献类型：
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作者：
J. Dallesasse;W. E. Plano;D. Nam;K. Hsieh;J. Baker;N. Holonyak;C. Kuo;R. Fletcher;T. Osentowski;M. Craford
采用高禁带Ⅲ-V四元体系InY(AlxGa1−x)1−yP的Si扩散到量子阱异质结和超晶格中，导致了杂质诱导的层无序化。二次离子质谱仪、透射电子显微镜和光致发光数据表明，Si向与GaAs0.5匹配的InAlPInGaP超晶格中的扩散导致了各层的混合，从而形成了成分平均的合金。利用In0.5(AlxGa1，−x)0.5Pp-n量子阱异质结的硅层无序结构制备了埋层异质结激光器。无序定义条形几何半导体激光器在300K、6400A附近脉冲工作，在λ∼6255A、−47 °C下实现连续波工作。
Diffusion of Si into quantum‐well heterostructures and superlattices employing the high gap III‐V quaternary system Iny (AlxGa1−x )1−yP is shown to result in impurity‐induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP‐InGaP superlattice grown lattice matched on GaAs (y≊0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried‐heterostructure lasers are fabricated using Si layer disordering of In0.5 (Alx Ga1−x )0.5 P p‐n quantum‐well heterostructures. The disorder‐defined stripe‐geometry diode lasers operate pulsed at 300 K near 6400 A. Continuous wave operation at λ∼6255 A is achieved at −47 °C.