Optical properties of metamorphic type-I InAs 1-x Sb x /Al y In 1-y As quantum wells grown on GaAs for the mid-infrared spectral range
Optical properties of metamorphic type-I InAs 1-x Sb x /Al y In 1-y As quantum wells grown on GaAs for the mid-infrared spectral range
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在 GaAs 上生长的中红外光谱范围变质 I 型 InAs 1-x Sb x /Al y In 1-y As 量子阱的光学特性
DOI：
10.1088/1361-6463/ab37cf
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Repiso E
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文献类型：
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作者：
Repiso E
本文分析了利用GaAs衬底在松弛的Al In 1−y As变质缓冲层（MBLs）上通过分子束外延生长的InAs 1−x Sb x/Al y In 1−y As量子阱（QWs）的光学性质。Al - In - 1 - y - As MBLs的使用允许生长具有大i型波段偏移和发射波长bbb30 m的量子阱。对Sb含量高达x= 10%的量子阱的光致发光（PL）测量表明，在3.4 m的室温下，量子阱的光致发光强度随着波长的增加而增强。为了量化测量PL的趋势，我们使用基于八波段哈密顿量的理论模型计算了QW自发辐射（SE）。理论计算结果与实验结果吻合较好，表明随着波长的增加，所观察到的光强增强与压缩应变对量子阱价态能带结构的影响有关，压缩应变降低了态的能带边缘密度，使得更多载流子在固定载流子密度下可以进行辐射复合。我们的研究结果强调了i型InAs 1−x Sb x/Al y In 1−y As变质量子阱的潜力，可以解决与现有中红外异质结构相关的几个限制，并将这些新型异质结构建立为开发发光二极管和二极管激光器的合适平台。
We analyse the optical properties of InAs 1− x Sb x/Al y In 1− y As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al y In 1− y As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al y In 1− y As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths> 3 m. Photoluminescence (PL) measurements for QWs having Sb compositions up to x= 10% demonstrate strong room temperature PL up to 3.4 m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission (SE), using a theoretical model based on an eight-band Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs 1− x Sb x/Al y In 1− y As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.