Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O9–Bi3TiTaO9 solid solution thin film
Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O9–Bi3TiTaO9 solid solution thin film
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DOI：
10.1063/1.1407858
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发表时间：
2001-09
影响因子：
4
通讯作者：
Masatoshi Mitsuya;N. Nukaga;Takayuki Watanabe;H. Funakubo;K. Saito;M. Osada
中科院分区：
文献类型：
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作者：
Masatoshi Mitsuya;N. Nukaga;Takayuki Watanabe;H. Funakubo;K. Saito;M. Osada
通过金属有机化学气相沉积，在 650 °C 温度下，在 (111)Pt/Ti/SiO2/Si 衬底上直接结晶出低缺陷含量的 (1−x)SrBi2(Ta0.7Nb0.3)2O9+xBi3TiTaO9 (x=0–0.5) 固溶体 (SBTN+BTT) 薄膜。沉积的薄膜表现出强烈的（103）取向。直接结晶的SBTN(x=0)的剩余极化(Pr)非常小。然而，通过添加30%的BTT（x=0.3），Pr值增加到7.1μC/cm2，几乎等于在非易失性存储器应用中广泛研究的Sr0.8Bi2.2(Ta0.7Nb0.3)2O9(S0.8B2.2TN)的值。由于缺陷含量低，SBTN+BTT 固溶体的漏电流密度在高达 200 kV/cm 的电场下约为 10−8 A/cm2，而由于 Sr 位点存在缺陷，S0.8B2.2TN 的漏电流密度高于 10−6 A/cm2。固溶体薄膜表现出无疲劳特性。
(1−x)SrBi2(Ta0.7Nb0.3)2O9+xBi3TiTaO9 (x=0–0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650 °C by metalorganic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O9(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10−8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10−6 A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.