Conduction Properties of β-FeSi_2 Epitaxial Films with Low Carrier Density
Conduction Properties of β-FeSi_2 Epitaxial Films with Low Carrier Density
复制标题
低载流子密度β-FeSi_2外延薄膜的导电性能
DOI：
10.1002/pssc.201300342
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Keiichi Noda and Yasufumi Fujiwara
中科院分区：
文献类型：
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作者：
Yoshikazu Terai;Nozomu Suzuki;Keiichi Noda and Yasufumi Fujiwara
研究了生长在Si（001）或Si（111）衬底上的β - fesi2外延膜的电输移特性，以阐明低电子密度（~ 1016cm‐3）β - fesi2外延膜的电传导机制对生长取向的依赖。随着温度的降低，两种外延薄膜都发生了从带导到跳导的转变。β - FeSi2on Si（111）薄膜比β - FeSi2on Si（001）薄膜在更高温度下发生转变。当外延膜退火时，转变温度向低温方向移动。经800℃退火的β - FeSi2on Si（001）薄膜在70 K时的电子迁移率最高，为14800 cm2/V·s。这些结果可以通过β - fesi2外延膜中缺陷水平的传导来理解。（©2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
The electrical transport properties of β‐FeSi2epitaxial films grown on Si(001) or Si(111) substrates were investigated to clarify the growth‐orientation dependence of the electrical conduction mechanism in the β‐FeSi2epitaxial films with low electron density of ∼1016cm‐3. As temperature was decreased, the transition from band conduction to hopping conduction was observed in both the epitaxial films. The β‐FeSi2on Si(111) film showed the transition at higher temperature than the β‐FeSi2on Si(001). When the epitaxial films were annealed, the transition temperature shifted to lower temperature. The β‐FeSi2on Si(001) film annealed at 800ºC showed the largest electron mobility of 14800 cm2/V·s at 70 K. These results were understood by the conduction through the defect levels in the β‐FeSi2epitaxial films. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)