Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design
Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design
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高频 E 类放大器设计中 MOS 非线性结电容的分段线性逼近
DOI：
10.1109/edssc.2003.1283521
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
C. Ho
中科院分区：
文献类型：
--
作者：
S.W. Ma;H. Wong;C. Ho
本文详细分析了用MOS晶体管实现的高频E类放大器，特别关注了漏极区非线性结电容的影响。为了便于分析和电路设计，结电容采用分段线性函数进行近似。结果表明，该处理方法具有较高的精度，用新设计公式计算的放大器特性与Pspice仿真结果吻合较好。
This work presents a detailed analysis of the high-frequency class E amplifier realized using MOS transistor with particular attention on the effects of the nonlinear junction capacitance in the drain region. To enable analytical analysis and for easy of circuit design, the junction capacitance is approximated using piece-wise linear functions. Results show that this treatment is accurate enough and the amplifier characteristics calculated with the newly developed design formulae agree very well with those of the Pspice simulation.