Electron-stimulated sputtering of thin amorphous solid water films on Pt(111).

Electron-stimulated sputtering of thin amorphous solid water films on Pt(111).
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Pt(111) 上非晶态固体水薄膜的电子刺激溅射。

DOI:
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发表时间:
2005
影响因子:
4.4
通讯作者:
G. Kimmel
G. Kimmel
中科院分区:
化学2区
文献类型:
--
作者:
N. G. Petrik;G. Kimmel

文献摘要

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研究了Pt(111)衬底上沉积的非晶态固体水薄膜的电子受激溅射。溅射似乎由两个过程主导:(1)水分子的电子激发脱附和(2)导致分子氢和分子氧产生的电子激发反应。水的电子激发脱附随膜厚的增加而单调增加。相比之下,总溅射-其中包括所有的电子刺激的反应通道-是最大化的膜的中间厚度。溅射产率与厚度的关系表明,由于在水/真空界面和Pt/水界面的反应发生的膜的腐蚀。D2 O和H2O的分层膜的实验表明,由于在Pt/水界面的反应,氢的显着损失。电子受激溅射是独立的温度低于约80 K,并迅速增加,在较高的温度。
The electron-stimulated sputtering of thin amorphous solid water films deposited on Pt(111) is investigated. The sputtering appears to be dominated by two processes: (1) electron-stimulated desorption of water molecules and (2) electron-stimulated reactions leading to the production of molecular hydrogen and molecular oxygen. The electron-stimulated desorption of water increases monotonically with increasing film thickness. In contrast, the total sputtering--which includes all electron-stimulated reaction channels--is maximized for films of intermediate thickness. The sputtering yield versus thickness indicates that erosion of the film occurs due to reactions at both the water/vacuum interface and the Pt/water interface. Experiments with layered films of D2O and H2O demonstrate significant loss of hydrogen due to reactions at the Pt/water interface. The electron-stimulated sputtering is independent of temperature below approximately 80 K and increases rapidly at higher temperatures.