Excitonic and biexcitonic decoherence in self-assembled GaAs quantum dots as observed by phase-locked interferography
Excitonic and biexcitonic decoherence in self-assembled GaAs quantum dots as observed by phase-locked interferography
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DOI：
10.1063/1.2187441
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发表时间：
2006-03
影响因子：
4
通讯作者：
K. Kuroda;T. Kuroda;K. Sakoda;Kenji Watanabe;N. Koguchi;G. Kido
中科院分区：
文献类型：
--
作者：
K. Kuroda;T. Kuroda;K. Sakoda;Kenji Watanabe;N. Koguchi;G. Kido
我们观察了单个自组装 GaAs 量子点发射的单光子干涉图。干涉仪上应用了相位稳定器，使我们能够追踪弱发射与光子计数水平的自相关性。在低激发下，点中激子的平均数量小于 1，干涉术显示单指数衰减，反映激子退相干。在中等高的激发下，发现激子-双激子跃迁之间的偏振干涉出现在干涉图上。同时测定双激子的退相干时间和结合能。
We observe single-photon interferograms for emission of a single self-assembled GaAs quantum dot. A phase stabilizer is applied to the interferometer, enabling us to trace autocorrelations of weak emissions with a photon-counting level. At low excitation, where the average number of excitons in a dot is less than one, interferography reveals a single exponential decay, reflecting excitonic decoherence. At moderately high excitation, polarization interference between the exciton-biexciton transitions is found to appear on the interferogram. The decoherence time and the binding energy of biexcitons are determined simultaneously.