Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
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基于二维各向异性ReS2场效应晶体管的集成数字逆变器
DOI：
10.1038/ncomms7991
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发表时间：
2015-05-07
影响因子：
16.6
通讯作者：
Xing, Dingyu
中科院分区：
文献类型：
--
作者：
Liu, Erfu;Fu, Yajun;Wang, Yaojia;Feng, Yanqing;Liu, Huimei;Wan, Xiangang;Zhou, Wei;Wang, Baigeng;Shao, Lubin;Ho, Ching-Hwa;Huang, Ying-Sheng;Cao, Zhengyi;Wang, Laiguo;Li, Aidong;Zeng, Junwen;Song, Fengqi;Wang, Xinran;Shi, Yi;Yuan, Hongtao;Hwang, Harold Y.;Cui, Yi;Miao, Feng;Xing, Dingyu
半导体二维过渡金属二硫属化合物正在成为后硅电子产品的首选。虽然它们中的大多数表现出各向同性的行为，但降低晶格对称性可能会导致各向异性的性质，这在科学上是有趣的，并且可能有用。在这里，我们提出了原子级薄的二硫化铼（ReS 2）薄片具有独特的扭曲的1 T结构，表现出面内各向异性特性。我们制作单层和少层ReS 2场效应晶体管，表现出具有竞争力的性能与大电流开/关比（1007）和低亚阈值摆幅（100 mV每十年）。沿两个主轴观察到的各向异性比沿着达到3.1，这是所有已知的二维半导体材料中最高的。此外，我们成功地展示了一个集成的数字逆变器具有良好的性能，通过利用两个ReS 2各向异性场效应晶体管，这表明有前途的大规模二维逻辑电路的实施。我们的研究结果强调了具有低晶体对称性的二维半导体材料的独特性能，可用于未来的电子应用。 许多二维材料表现出各向同性，但各向异性可以扩展未来设备的功能。在这里，作者用单层和少层的二硫化物制作了场效应晶体管，并观察到沿两个主轴的各向异性比为沿着
Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼107) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications. Many two-dimensional materials exhibit isotropic properties, but anisotropy can extend the functionality of future devices. Here, the authors fabricate field-effect transistors from single and few-layer rhenium disulfide and observe an anisotropic ratio of three to one along the two principle axes
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影响因子：
6.2
作者：
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通讯作者：
Tiong, KK
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作者：
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通讯作者：
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作者：
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通讯作者：
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